PLASMA-ASSISTED CVD GROWTH AND CHEMICAL DOPING OF ARRAYED GRAPHENE FOR ELECTROCHEMICAL ENERGY APPLICATIONS

摘要

A direct-growth approach for fabricating aligned edge-oriented graphene array in an on-chip manner towards integrated electrochemical (EC) energy devices will be presented. Two types of substrates as current collectors, specifically, Si wafer and carbon cloth (CC) will be demonstrated. The use of Si wafer for direct graphene growth makes ease a potential integration with the matured Si-based device technology; whereas CC offers the opportunity to make flexible energy devices. However, for all energy devices, high-performance power/energy output requires efficient carrier generation and subsequent transfer across heterogeneous interfaces (e.g., electrode-electrolyte, catalyst-electrolyte, catalyst-support and electrode-collector). Both the architecture design of graphene-based electrode (or catalyst support) and the associated interface control are crucial.