The thermal evolution of various Si-H bonds, H2 molecules, and hydrogen induced platelets (HIPs) in H-plasma treated Czochralski (Cz) silicon wafers has been investigated with depth resolved μ-Raman Spectroscopy (μRS), Cross-sectional Transmission Electron Microscopy (XTEM), and Atomic Force Microscopy (AFM). It is found that the intensities of the Raman peaks of the Si-H bonds and the H2 molecules in dependence on the thermal annealing duration are highly correlated. The results imply that the Raman sub-peak at ~ 2105 cm can be assigned to the dihydride (SiH2) located at the inner surface of the (lOO)-oriented HIPs. From the comparison of μRS applied on the original wafer surface and u.RS on a beveled surface one can conclude that the sub-peak at ~ 2095 cm~(-1) can be assigned to the monohydride (SiH) located at the H-plasma damaged surface layer. Another sub-peak at ~ 2083 cm~(-1) is assigned to the SiH bonds at the inner surface of the (lll)-oriented HIPs. Based on these assignments, it can be seen that the (lll)-oriented HIPs gradually anneal out, while the (lOO)-oriented HIPs trap hydrogen atoms, which are released from the damaged surface layer.
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