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Purification of polysilicon fragments comprises a wet-chemical treatment of the polysilicon fragments in an aqueous mixture of hydrogen fluoride and hydrogen chloride and a subsequent thermal treatment of the polysilicon fragments
Purification of polysilicon fragments comprises a wet-chemical treatment of the polysilicon fragments in an aqueous mixture of hydrogen fluoride and hydrogen chloride and a subsequent thermal treatment of the polysilicon fragments
Purification of polysilicon fragments, comprises a wet-chemical treatment of the polysilicon fragments in an aqueous mixture of hydrogen fluoride and hydrogen chloride and a subsequent thermal treatment of the polysilicon fragments at a temperature of at least 600[deg] C and at most 1000[deg] C.
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