Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

摘要

UHVCVD-grown Si/Si_(1-x)Ge_x/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E_1 transition energy in the Si_(1-x)Ge_x alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si_(1-x)Ge_x epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.