Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures

摘要

Three SiGe/Si heterostructures with different Ge contents have been examined by deep level transient spectroscopy (DLTS) and capacitance-voltage techniques. DLTS revealed a broad band of traps from 80 to 250 K in the as-grown samples. Arrhenius plots of a