A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3μm lasers

摘要

As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3μm, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585°C. Deposition of both digital and bulk alloy layers was carried out in a V8OH system, on two- and three inch n-InP substrates, and growth temperatures were monitored using absorption band-edge thermometry. The basic MQW structures consisted of 10nm lattice matched confinement layers of digital alloy InAlGaAs (～1.0μm bandgap), or bulk InAlAs, bounding 6nm layers of digital alloy In{sub}O.73Al{sub}0.165Ga{sub}0.105 As.