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InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs

机译：MOVPE在氮气氛中以1.55 µm VCSEL生长的InAlGaAs / InP MQW结构

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Mereuta A.; Mircea A.; Rudra A.; Iakovlev V.; Syrbu A.; Suruceanu G.; Berseth C.-A.; Caliman A.; Leifer K.; Kapon E.;
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年度 2004
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1. Preliminary reliability studies of 1.55 mu m graded index separate confinement buried heterostructure (GRINSCH) multiple quantum well (MQW) lasers grown by metalorganic vapour phase epitaxy (MOVPE) [J] . Redstall R.M., Skeats A.P. Electronics Letters . 1990,第15期

机译：通过金属有机气相外延（MOVPE）生长的1.55μm梯度折射率分离禁闭掩埋异质结构（GRINSCH）多量子阱（MQW）激光器的初步可靠性研究
2. Electron-beam pumped blue (462 nm) VCSEL on MOVPE- grown ZnSSe/ZnMgSSe MQW structure [J] . V.Yu. Bondarev, V.I. Kozlovsky, I.V. Malyshev, Physica Status Solidi. C, Conferences and critical reviews . 2005,第2期

机译：MOVPE生长的ZnSSe / ZnMgSSe MQW结构上的电子束泵浦蓝色（462 nm）VCSEL
3. Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure [J] . V.Yu. Bondarev, V.I. Kozlovsky, A.B. Krysa, Journal of Crystal Growth . 2004,第1a4期

机译：基于MOVPE生长的GaInP / AlGaInP MQW结构的扫描电子束泵浦谐振周期增益VCSEL
4. High performance buried heterostructure 1.55 /spl mu/m wavelength AlGaInAs/InP multiple quantum well lasers grown entirely by MOVPE technique [C] . Tawee Tanbun-Ek, Chu, S.N.G. Indium Phosphide and Related Materials, 1998 International Conference on . 1998

机译：完全通过MOVPE技术生长的高性能隐埋异质结构1.55 / splμ/ m波长AlGaInAs / InP多量子阱激光器
5. InAlGaAs/InP Light Emitting Transistors and Transistor Lasers Operating Near 1.55 microm. [D] . Huang, Yong. 2010

机译：InAlGaAs / InP发光晶体管和晶体管激光器工作在1.55微米附近。
6. Variation on the Microstructure and Mechanical Properties of Ti-Al-N Films Induced by RF-ICP Ion Source Enhanced Reactive Nitrogen Plasma Atmosphere [O] . Dongke Li, Lixia Xia, Lian Yan, 2020

机译：RF-ICP离子源增强的活性氮等离子体气氛引起的Ti-Al-N薄膜的微观结构和力学性能的变化
7. Temperature stabilized 1.55 μm photo-luminescence in InAs quantum-dots grown on InAlGaAs/InP [O] . Z. H. Zhang 2012

机译：在InAlGaAs / InP上生长的InAs量子点中温度稳定的1.55μm光致发光

InAlGaAs/InP MQW structures grown by MOVPE in nitrogen atmosphere for 1.55 µm VCSELs

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