A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 /spl mu/m lasers

摘要

As part of an investigation of the optimum growth conditions for the preparation of strained MQW InAlGaAs lasers for operation at 1.3 /spl mu/m, one to six quantum well structures, with up to 1.4% strain, have been grown at temperatures in the range 470 to 585/spl deg/C. Deposition of both digital and bulk alloy layers was carried out in a V80H system, on two- and three inch n-InP substrates, and growth temperatures were monitored using absorption band-edge thermometry. The basic MQW structures consisted of 10 nm lattice matched confinement layers of digital alloy InAlGaAs (/spl sim/1.0 /spl mu/m bandgap), or bulk InAlAs, bounding 6 nm layers of digital alloy In/sub 0.73/Al/sub 0.165/Ga/sub 0.105/As.