High-power and high-efficiency 1.3 mu m InAsP compressively-strained MQW lasers at high temperatures

摘要

A high output power of 37 mW and high slope efficiency of more than 0.55 W/A at 90 degrees C has been obtained by using 1.05 mu m InGaAsP barrier layers with optimised composition for 1.3 mu m InAsP compressively-strained MQW laser diodes.