1.3 /spl mu/m InAsP/lnAlGaAs MQW lasers for high-temperature operation

摘要

InAsP/lnAlGaAs strained multiquantum-well (MQW) 1.3 /spl mu/m lasers with a large conduction band discontinuity are proposed and demonstrated for the first time. An InAsP/InAlGaAs MQW layer with high structural and optical quality was obtained by gas-source molecular beam epitaxy growth combined with post-growth 650/spl deg/C rapid thermal annealing. The lasers exhibited a low threshold current density of 1.1 kA/cm/sup 2/ with an excellent characteristic temperature as high as 116 K in the temperature range 25-85/spl deg/C.