Design, Simulation, Fabrication and Study of Oscillator Modules for Microwave Integrated Circuits

摘要

We present the results of development of an oscillator module (frequency of 38 GHz) with a silicon double-drift IMPATT diode. The ohmic contacts to it were made using interstitial phases TiN and TiB. This restricted mass transport in the contacts, thus resulting in improvement of diode specifications and reliability. The principles of IMPATT diode mounting in microwave circuits are considered. The operating frequency of the oscillator integrated modules can be varied from 30 up to 39 GHz; the microwave generation power is 10-50 mW.