High-temperature characterization of 1200 V SiC DMOSFETs

摘要

Silicon Carbide (SiC) offers many advantages for the development of solid state power devices. SiC power electronic devices can operate at higher temperatures, higher breakdown voltages with low leakage currents, and reduced conduction and switching losses [1]. A significant reduction in the weight and size of power conversion systems is expected when SiC power electronics components are used in place of conventional silicon solutions. Silicon (Si) IGBT's are widely used in converter technologies, but conduction and switching losses limit the maximum junction temperature to around 125°C [2]. The Army Research Laboratory is developing 4H-SiC DMOSFET devices to provide enhanced temperature capability and higher power density for advanced power conversion systems.