High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

摘要

We have investigated the thermal behavior of our recently developed 1200 V, 200 A 4H-SiC power DMOSFETs operating from 20℃ up to 300℃. Compared to the first generation SiC DMOSFET that was commercially released early this year, this 4H-SiC power DMOSFET shows a ~ 50% reduction in the total specific on-resistance at room temperature. Temperature dependence of the key parameters of this MOSFET, such as on-resistance, threshold voltage, and the MOS channel mobility, are reported in this paper. The MOSFET showed normally-off characteristics throughout the entire experimental temperature range. Different temperature dependence of the total on-resistance in different temperature regimes has been observed.