GIDL and F-N tunneling current correction on charge pumping techniques for profiling traps in high-k gated MOSFETs

摘要

Although charge pumping (CP) is useful for profiling traps in high-k gated MOSFETS, the parasitic leakage of CP current should be solved first. In this work, two methods are proposed to separate the CP current from the parasitic leakage in MOSFETs with thin high-k gate dielectric. Results show that the CP with correction approaches are essential to lateral and depth profiles [1].