Calculation of lattice heating in 4H-SiC RF power devices, based on 2d electrical and 3d thermal simulations

摘要

Silicon carbide is one of the best materials for applications in power RF electronics due to the high breakdown electrical field, saturation velocity and thermal conductivity. In design of high-performance power devices, thermal effects must be included in the simulations in an efficient manner to facilitate device optimization. In this paper we are studying thermal effects in 4H-SiC RF power devices using simulations based on a combination of 2D device simulations for the electrical transport and 3D thermal simulations for the lattice heating.