Calculation of lattice heating in SiC RF power devices

摘要

Silicon carbide MESFET devices arc suitable for high-speed and high-power applications. In this paper we are studying thermal effects in 4H-SiC RF power devices. The simulations are based on a combination of 2D device simulations for the electrical transport, and 3D thermal simulations for the lattice heating. We show that the method gives good accuracy, efficiency, flexibility and capacity dealing with tasks, where a 2D coupled electrical thermal simulation is not sufficient. We also present an improvement of Roschke and Schwierz mobility model, based on Monte Carlo simulations for the temperature dependencies of the mobility parameters β and υ_(sat).