Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

摘要

We have developed new electrolyte solutions for high voltage electrchemical oxidation of porous silicon and have demosntrated their utility by fabricating porous silicon structures containing a buried oxide layer. These structures have high breakdown voltages, over 300V, and are suitable for epitaxial growth of device grade silicon layers. These new structures provide the basis for a versatile SOI technology for the integration high speed and low power devices with hihg voltage power devices within a monolithic substrate. This paper complements technical detals of a novel SOI technology described in the preceding paper in this volume.