Buried layer, especially a buried silicon oxide layer of a silicon on insulator substrate for low power microelectronics, is produced by nucleation and growth at a microcavity layer

摘要

Buried layer production involves nucleation and growth at a microcavity layer. A buried layer is produced by: (a) forming a layer of microcavities (2), acting as volume compensation and nucleation centers, at the intended buried layer level in a substrate (1); (b) forming precipitated buried layer material nuclei from the nucleation centers; and (c) growing precipitates from the nuclei by concentration of buried layer material species supplied to the microcavity layer.