OPTICAL EFFECTS AND MICROSTRUCTURE OF BURIED INSULATOR LAYER FORMED BY O^+ AND N^+ CO-IMPLANTATION

摘要

The microstructure and optical properties of a buried layer formed by O+(200keV,1.8×1018/cm2)and N+(180 keV,4×1017/cm2)co-implantation and annealed at 1200℃for 2 h have been investigated by Auger electron,IR absorption and reflection spectroscopicmeasurements.The results show that the buried layer consists of silicon dioxide and SiOx（x 2）and the nitrogen segregates to the wings of the buried layer where it forms an oxynitride.Bydetail theoretical analysis and computer simulation of the IR reflection interference spectrum,therefractive index profiles of the buried layer were obtained.