Formation of a silicon-germanium-on-insulator structure by oxidation of the buried porous silicon layer

摘要

Topic Being simple forms the SiGe on insulator layer of the porous silicon which is formed under Ge content layer (or the territory) by oxidizing offer direct method.SolutionsThis method the step which converts the territory where step and this positive hole which offer the structure which has the Ge content layer on the Si content baseplate, and this Si content baseplate where the territory where the positive hole is included mainly was formed in are included mainly to the porous territory and, in order to offer the SiGe on insulator material which is eased substantially, includes with the step which the structure which includes this porous territory annealing is done. Selective figure Figure 3