Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

摘要

We are reporting on the epitaxial growth of Al/Ga/N films on 200 mm Si substrates carried out in Veeco's Propel rotating disk, single wafer, vertical MOCVD reactor. The Turbodisc reactor is designed for uniform alkyl and hydride flow distribution, and temperature profile, resulting in uniform and concentrically symmetric epilayer thickness and chemical composition. Results are presented on film stress and wafer curvature control facilitated by adjusting the thickness and growth conditions of individual layers in AlN/GaN superlattices. The growth of highly resistive, intrinsically carbon-doped GaN layers is studied, and the influence of growth conditions, growth temperature, pressure, and V/III ratio, on carbon incorporation rate, crystal quality, and surface morphology will be discussed in this paper. Carbon incorporation is enhanced at lower growth temperature, lower pressure, and lower V/III ratios; we have obtained concentrations as high as 3E19/cm~3 at a growth pressure of 35 Torr and growth temperature of 960°C.