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Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

机译:单晶片旋转盘MOCVD反应器中的外延III-氮化物膜生长

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We are reporting on the epitaxial growth of Al/Ga/N films on 200 mm Si substrates carried out in Veeco's Propel rotating disk, single wafer, vertical MOCVD reactor. The Turbodisc reactor is designed for uniform alkyl and hydride flow distribution, and temperature profile, resulting in uniform and concentrically symmetric epilayer thickness and chemical composition. Results are presented on film stress and wafer curvature control facilitated by adjusting the thickness and growth conditions of individual layers in AlN/GaN superlattices. The growth of highly resistive, intrinsically carbon-doped GaN layers is studied, and the influence of growth conditions, growth temperature, pressure, and V/III ratio, on carbon incorporation rate, crystal quality, and surface morphology will be discussed in this paper. Carbon incorporation is enhanced at lower growth temperature, lower pressure, and lower V/III ratios; we have obtained concentrations as high as 3E19/cm~3 at a growth pressure of 35 Torr and growth temperature of 960°C.
机译:我们报道了在Veeco推进盘,单晶片,立式MOCVD反应器中进行的200mM Si基板上的Al / Ga / N膜的外延生长。 TurboDisc反应器设计用于均匀的烷基和氢化物流量分布,以及温度曲线,导致均匀且同心对称的脱垂厚度和化学组成。通过调节ALN / GAN超晶格中各个层的厚度和生长条件,促进了薄膜应力和晶片曲率控制的结果。研究了高阻,本质上碳掺杂GaN层的生长,并在本文中讨论了生长条件,生长温度,压力和V / III比率对碳掺入率,晶体质量和表面形态的影响。碳掺入在较低的生长温度,较低的压力和较低的V / III比率下增强;我们已经在35托的生长压力和960℃的生长温度下获得高达3E19 / cm〜3的浓度。

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