首页> 外文OA文献 >Polishing of (1 0 0) γ-LiAlO2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD

【2h】

Polishing of (1 0 0) γ-LiAlO2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD

机译：MOCVD法抛光（1 0 0）γ-LiAlO2晶片及其对ZnO薄膜外延生长的影响

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Hui Lin; Shengming Zhou; Hao Teng; Tingting Jia; Xiaorui Hou; Shulin Gu; Shunming Zhu; Zili Xie; Ping Han; Rong Zhang;
展开▼
作者单位

展开▼
年度 2009
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Polishing of (100)gamma-LiAlO_2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD [J] . Hui Lin, Shengming Zhou, Hao Teng Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2009,第1a2期

机译：MOCVD法抛光（100）γ-LiAlO_2晶片及其对ZnO薄膜外延生长的影响
2. Epitaxial growth of ZnO films on (100) and (001) γ-LiAlO2 substrates by pulsed laser deposition [J] . Jun Zou, Shengming Zhou, Jun Xu, Journal of Materials Science . 2006,第18期

机译：脉冲激光沉积在（100）和（001）γ-LiAlO2衬底上外延生长ZnO薄膜
3. Homoepitaxial growth of high-quality nonpoiar ZnO films by MOCVD and evaluation of the homoepitaxial ZnO films by XRD measurement for asymmetric planes [J] . Yasuhiro Kashiwaba, Takami Abe, Akira Nakagawa, Physica status solidi . 2009,第5期

机译：MOCVD制备高质量非多孔ZnO薄膜的同质外延生长以及通过XRD测量不对称平面对同质外延ZnO薄膜的评估
4. MOCVD Growth And Saw Properties Of Epitaxial ZnO Thin Films [C] . Emanetoglu N.W., Gorea C., Liang S., Frequency Control Symposium, 1998. Proceedings of the 1998 IEEE International . 1998

机译：外延ZnO薄膜的MOCVD生长和锯切性能
5. Highly conductive and transparent cadmium oxide thin films grown by MOCVD: Epitaxial growth and doping effects [D] . Jin, Shu. 2006

机译：通过MOCVD生长的高导电性和透明氧化镉薄膜：外延生长和掺杂效应
6. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates [O] . Yu-Chiao Lin, Ikai Lo, Hui-Chun Shih, 2017

机译：在γ-LiAlO2（100）衬底上生长的M平面GaN薄膜的生长和表征
7. Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates [O] . Wang, L., Xiong, K., He, Y., 2017

机译：在ZnO衬底上外延生长晶片级二维多型Zns薄膜
8. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques [R] . Li, S. S. 1985

机译：LpE和mOCVD技术生长Gaas和al（x）Ga（1-x）as外延薄膜生长参数的研究

Polishing of (1 0 0) γ-LiAlO2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD

著录项

引文网络

相似文献

相关主题

期刊订阅