MOCVD Growth and Characterization of GaN HEMT Material

摘要

AlGaN/GaN HEMTs are of interest for high power and high frequency device applications due to their superior material properties. MOCVD growth of GaN HEMTs shows great promise for scale-up volume production with high fabrication yield and subsequently low manufacture cost. Volume production of GaN HEMTs on 3" and 100 mm SiC has been demonstrated at IQE. Various characterizations have been used to evaluate the material quality, uniformity and epi growth reproducibility. SPC charts show superb wafer-to-wafer reproducibility with a Cpk of ～2.0 for sheet resistance uniformity. Lehighton, contactless Hall, XRD and Accent PL measurements show excellent wafer uniformity. Bow/Warp tests indicate that the epi growth process only adds up to 10 μm bow/warp. AFM measurements indicate an atomic smooth surface.