AlGaN/GaN HEMT材料的高温MOCVD生长研究

摘要

高电子迁移率AlGaN/GaN HEMT结构材料的研制一直是GaN基射频微波器件的重要发展方向.采用自主研制的生产型高温MOCVD设备进行AlGaN/GaN HEMT结构材料的生长,通过高温MOCVD外延生长技术改善了AlGaN势垒层、AlN插入层的晶体质量和表面质量,从而获得了较高二维电子气迁移率的AlGaN/GaN HEMT结构材料.高分辨X射线衍射仪的分析表明,AlGaN外延层Al组分含量为22.7％,厚度为19.4 nm;Hall效应测试仪的测试表明,HEMT结构材料的室温二维电子迁移率和浓度分别为2 040 cm2/V·s和6.15×1012 cm-2,具有较为优异的二维电子气输运性能.上述研究结果表明:国产高温MOCVD设备可为高电子迁移率AlGaN/GaN HEMT结构材料的研制提供新的设备平台.%The development of high electron mobility AlGaN/Ga N HEMT structural materials has been an important development direction of Ga N based RF microwave devices. In this paper, the AlGaN/Ga N HEMT structure material was grown by the self-manufactured high temperature MOCVD equipment. The crystal quality and surface quality of the AlGaN barrier layer and the Al N insertion layer were improved by the high temperature MOCVD epitaxial growth technology, thus the high two-dimensional electron gas mobility was obtained by the AlGaN/Ga N HEMT structure material. The analysis of HR-XRD shows that the content of Al component in AlGaN epitaxial layer is 22.7％ and the thickness is 19.4 nm. The test of Hall effect tester shows that the 2 DEG and concentration of HEMT structure materials are 2 040 cm2/V·s and 6.15 ×1012 cm-2 respectively at room temperature, and have excellent two dimensional electron gas transport properties. The above research results show that the domestic high temperature MOCVD equipment can provide a new equipment platform for the development of high electron mobility AlGaN/Ga N HEMT structural materials.