In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing.The nominally undoped samples were irradiated either with 3 MeV protons to a fluence of 1.2x10~18 p/cm~2 with 1 MeV electrons to a fluence of 1x10~18 e/cm~2.The investigation was performed with positron lifetime and Doppler-broadening measurements.The measurements were done at room temperature and in some cases down to 10 K to investigate the thermal dependence of the trapping characteristics of the positrons.
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机译：在这项研究中，我们讨论了电子和质子辐射之后的微观结构变化以及等时退火期间辐射诱导的缺陷的热量演变。用3meV质子辐射到1.2×10〜18p / cm〜2的注释出来的样品。用1毫升的电子电量为1x10〜18 e / cm〜2。用正电子寿命和多普勒扩大测量进行研究。测量在室温下进行，在某些情况下降至10k以研究热依赖性正弦的捕获特性。
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