Growth of Epitaxial Site-Engineering Bi_4Ti_3O_12-Based Thin Films by MOCVD and Their Characterization

摘要

Thin films of BIT,La-substituted BIT (BLT) and La-and V-cosubstituted BIT (BLTV) were epitaxially grown on SrRuO_3/SrTiO_3 substrates at 850 deg C by metalorganic chemical vapor deposition (MOCVD),and their electrical properties were systematically compared.All films on (100),(110) and (111)-oriented substrates were epitaxially grown with (001)-,(104)-/(014)- and (118)-preferred orientations,respectively.