Considerations for integration of electroplated copper onto semiconductor substrates

摘要

The use of copper as a back-end metallization scheme has been receiving a fair amount of attention lately, fueled strongly by announcements by Motorola and IBM. Several methods currently exist to deposit and fill the vias and trenches, however, electroplating has been shown to be one of the more viable of these choices. A thin seed layer is first deposited, followed by the electroplated copper to fill, which is then removed in the field by CMP. Since the fill and CMP of copper are relatively new to the industry, the integration aspects need to be considered in order for a viable product, with good yields, to be produced.