首页>
外国专利>
COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING AND SEMICONDUCTOR WAFER PLATED THEREBY WITH LITTLE PARTICLE ADHESION
COPPER ELECTROPLATING METHOD, PURE COPPER ANODE FOR COPPER ELECTROPLATING AND SEMICONDUCTOR WAFER PLATED THEREBY WITH LITTLE PARTICLE ADHESION
展开▼
机译:铜电镀方法,用于纯铜电镀的纯铜阳极和小颗粒粘附由此沉积的半导体晶片
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 µm or less or 60 µm or more or a non-recrystallized anode.;Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.
展开▼