Optical properties of self-organized InGaAs/GaAs quantum dots in field-effect structures

摘要

The result of photoluminescence (PL) and electroreflectance (ER) measurements on InGaAs/GaAs self-organized quantum dots (QDs) in field-effect structure are presented. It has been found that the QDs PL can be completely quenched in reversely biased structure both at room temperature and at T=4.2K. A non-monotonic dependence of QDs PL peak energy with applied bias is observed at low temperature, which is attributed to the band-gap re-normalization due to QDs charging and size distribution effects. The electric field dependence of the QDs ER feature at room temperature has been analysed. A red shift of that feature with increasing electric field has been observed.