Optical Properties of InGaAsN/GaAs Quantum Well and Quantum Dot Structures for Longwavelength Emission.

摘要

This report investigated the optical properties of heterostructures with InGaAsN/ GaAs QW-like and QD-like insertions. GaAsN and InGaAsN layers with relatively high nitrogen content (more than 1%) were grown. The long wavelength emission tip to 1.32 microns at room temperate was realized. TEM and optical studies confirm formation of quantum dots for the case of higher indium concentrations.