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Antireflection structures for visible and infrared wavelengths fabricated on silicon substrates by fast atom beam etching

机译:通过快速原子束蚀刻在硅基板上制造的可见光和红外波长的抗反射结构

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Subwavelength structured (SWS) surface directly patterned on a substrate performs as antireflection surface. We fabricated the two-dimensional SWS surfaces on crystal silicon substrates and tested the reflection properties for visible and infrared wavelengths. The SWS surfaces were patterned by electron beam lithography and etched by SF$-6$/ fast atom beam (FAB). In this work, the FAB process was first applied to fabricate the SWS surface. We fabricated the hole type SWS surface and the column type SWS surface. In both types, the grating period was 200 nm and the grooves were approximately 275 nm deep. The dependence of the reflectivity on the free-space wavelength between 200 nm and 2500 nm was examined. In addition, dependence of the reflectivity on the incident angle was examined with He-Ne laser light. From those experimental results, it was shown that the fabricated SWS surfaces, especially column type SWS surface, prevented the reflection in the wide ranges of wavelength (200 nm less than $lambda$- 0$/ less than 2500 nm) and incident angle (5 degrees less than $theta less than 60 degrees).
机译:在基板上直接图案化的亚波长结构(SWS)表面执行作为抗反射表面。我们在晶体硅基板上制造了二维SWS表面,并测试了可见光和红外波长的反射特性。 SWS表面被电子束光刻图案化,并通过SF $ -6 $ /快速原子束(FAB)蚀刻。在这项工作中,首先应用Fab工艺以制造SWS表面。我们制造了孔型SWS表面和柱式SWS表面。在这两种类型中,光栅周期为200nm,凹槽约为275nm深。检查反射率对200nm和2500nm之间的自由空间波长的依赖性。另外,用HE-NE激光检查反射率对入射角的依赖性。从那些实验结果中,表明制造的SWS表面,尤其是柱型SWS表面,防止了波长范围内的反射(比$ 200nm少于$λ$ - 0 $ /少于2500nm)和入射角( 5度小于$ theta小于60度)。

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