Method of fabricating a structure by anisotropic etching, and silicon substrate with an etching mask

摘要

In a fabrication method of fabricating a structure, a basic etching mask corresponding a target shape with a convex corner, and a correction etching mask with a first portion, a second portion and an opening portion are formed on a single-crystal silicon substrate, and the silicon substrate with the basic etching mask and the correction etching mask formed thereon is subjected to an anisotropic etching to form the silicon substrate having the target shape. The first portion extends in a 110 direction, respective ends of the first portion are connected to the basic etching mask. The second portion is connected to a side of the first portion extending in the 110 direction.