Copper electroplating for advanced interconnect technology

摘要

Copper electroplating for gap fill of damascene structures on advanced interconnects has been demonstrated to be a viable technology. Development and optimization of robust electroplating processes for void-free fill requires a full understanding of the role of the plating solution components (brighteners, levelers, and suppressing agents) and their behavior as a function of plating amperage, waveform and bath temperature. Methodology for void-free fill of damascene structures will be presented, as well as an interpretation of grain growth transformations and morphological changes for the thin copper films.