Towards the optimization of amt barrel reactors for silicon epitaxy

摘要

In this work, the epitaxial silicon deposition by SiHCl_3-hydrogen mixtures in a AMT 7700 barrel reactor was analyzed through a detailed model where a three dimensional flow dynamic was solved by reduction to a two dimensional geometry under cylindrical coordinates. The model was used to investigate the role of the reactor geometry and of the process parameters on the axial deposition uniformity. A comparison with industrial experimental data was also performed.