A method for controlling an epitaxy process wake displacement in a the epitaxial reactor, regulator and data tapping lysis module for epitaxy wake processes

摘要

Method for controlling a epitaxial growth process in a the epitaxial reactor, the method comprising:the implementation of a first wake connecting passage of the epitaxy process and the regulation of the temperature of the epitaxy process wake displacement during the first passage through a temperature measuring means, which the temperature based on a first thermocouple - deviation parameter value is determined;the optimization of the thermocouple - deviation parameter for a second passage through the steps of:– the measurement of an actual output parameter value of the epitaxial growth process of the first passage;– the installation of a modeled output parameter value as a function of the actual output parameter value and a second thermocouple - deviation parameter value;– the determination of a distance between a target output parameter value and the modeled output parameter value;– the determination of the second thermocouple - deviation value as a thermal element - deviation value, the minimum distance between the modeled output parameter value and the target parameter value;the implementation of a second run of the epitaxy process wake process and the regulation of the temperature of the epitaxy process wake displacement during the second passage through the temperature measuring means, which the temperature on the basis of the second thermocouple - deviation parameter value..