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Self-limiting oxidation during growth of very thin oxides on Si(001) surface studied by real-time auger electron spectroscopy

机译:通过实时螺旋电子光谱研究的Si(001)表面上非常薄氧化物生长的自限氧化

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The oxide growth kinetics at the initial stage of oxidation on the Si(001) surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self- limiting oxidation observed for growth of oxides as thin as several A at temperatures above 630°C.
机译:通过使用放牧入射电子束来研究Si(001)表面上氧化初始氧化阶段的氧化物生长动力学,用于阐明观察的rapeed观察,以阐明观察到的自限制氧化的反应机理氧化物如630℃高于630℃的温度。

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