Self-limiting oxidation during growth of very thin oxides on Si001 surface studied by real-time Auger electron spectroscopy

摘要

The oxide growth kinetics at the initial stage of oxidation on the Si[001] surface was investigated by real-time Auger electron spectroscopy using a grazing-incident electron beam for RHEED observation to clarify the reaction mechanism of self-limiting oxidation observed for growth of oxides as thin as several A at temperatures above 636/spl deg/C.