W CMP process integration

摘要

As integrated circuit devices continue to scale towards smaller geometry, the requirements imposed on the advanced metallization become increasingly stringent: high degree of planarity, low defectivity level, high device yield. Since etch back tungsten introduces many particles and recess, tungsten CMP appears as a very promising technology for new generation of ULSI devices. This work reports a characterisation of W CMP process using different slurries.