High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

摘要

High performance 1.3 $mu@m and 1.55 $mu@m InGaAsP/InP strained layer quantum well (SL-QW) lasers grown by low pressure metal organic chemical vapor deposition are reported in this paper. 1.3 $mu@m SL-QW lasers and 1.55 $mu@m SL-QW lasers with broad area threshold current densities as low as 400 A/cm$+2$/ and 450 A/cm$+2$/ (at cavity length 400 $mu@m), DC-PBH stripe device threshold currents of 5 approximately 10 mA and 6 approximately 10 mA were obtained, respectively. The prediction life time of 1.3 $mu@m SL-QW lasers is more than 10$+6$/ hrs at 25$DGR@C, and degeneration activated energy is 0.682 eV according to the accelerate aging tests.