InGaAs/InGaAsP/InP strained-layer quantum well lasers at approximately 2 mu m

摘要

The first successful operation of InGaAs strained layer quantum well (SL-QW) injection lasers at approximately 2 mu m is reported. The threshold current density and the external differential quantum efficiency of 5 mu m wide and 800 mu m long ridge waveguide lasers were 2.5kA/cm/sup 2/ and 6%, respectively. The devices had a reverse leakage current of less than 20 mu A at -1 V indicating epitaxial layers with low defect density.