High-performance 1.3-um and 1.55-um InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

摘要

Abstract: High performance 1.3 $mu@m and 1.55 $mu@m InGaAsP/InPstrained layer quantum well (SL-QW) lasers grown by lowpressure metal organic chemical vapor deposition arereported in this paper. 1.3 $mu@m SL-QW lasers and 1.55$mu@m SL-QW lasers with broad area threshold currentdensities as low as 400 A/cm$+2$/ and 450 A/cm$+2$/ (atcavity length 400 $mu@m), DC-PBH stripe devicethreshold currents of 5 approximately 10 mA and 6approximately 10 mA were obtained, respectively. Theprediction life time of 1.3 $mu@m SL-QW lasers is morethan 10$+6$/ hrs at 25$DGR@C, and degenerationactivated energy is 0.682 eV according to theaccelerate aging tests.!6