Relationship between the growth temperature and the 3D morphology of GalnP/InAsP strained heterostructures grown by Metal-Organic Vapour Phase Epitaxy

摘要

Zero-net strained multilayers of alternating GalnP and InAsP with lattice mismatches of -1% and 1% respectively have been grown on (OOl)InP by Metal-Organic Vapour Phase Epitaxy. They form a laterally modulated structure: rich-GalnP and rich-InAsP ribbons alternate along the lateral [110] direction. The effect of growth temperature on the morphology is reported and discussed. For the highest temperature (650°C), the structure is perfectly modulated and free of crystalline defects. The lateral period is of 0.28um while the so formed ribbons are several yon long in the [11 0] direction. At 610°C, the lateral period of the ribbons is reduced to 0.12^m but their length is lowered by at least one order of magnitude. Considering the possible effects of surface reconstruction, it is proposed that the length along [11 0] is directly limited by the surface diffusion and tends to be infinite to stabilize the structure.