InGaAs/GaAs strained quantum-well lasers

摘要

rication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In$-0.2$/Ga$-0.8$/As/GaAs lasers emitting near 1 $mu@m are useful as pump sources for erbium doped optical fiber amplifiers.