Investigation of InGaAsP Transition layers for Aluminum-free InGaAs/GaAs/InGaP Strained- Quantum-Well Lasers

摘要

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm/sup -1/