Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs

摘要

Recently, III-V compound semiconductors have attracted strong attention as a new channel material for post Si CMOS technologies. To fully utilize the channel properties at deeply scaled transistor node, short channel effects (SCEs) control is also very important. Therefore, we have developed extremely-thin-body (ETB) InGaAs-on-insulator (-01) structures [1]-[4]. However, mobility degradation with a decrease of body thickness (T_(body)) is critical problem to realize high performance ETB InGaAs-OI MOSFETs. Therefore, physical understanding and mobility enhancement technology are quite important. Actually, we have introduced MOS interface buffer layer, which has higher bandgap than that of channel layer, between oxide and channel, and increased the Indium (In) content in channel layer, as shown in Fig. 1 [3]-[4]. As a result, we have achieved high mobility at around T_(body) of 10 nm and have clarified the mobility enhancement mechanism [4]. In this work, we have further analyzed the effect of channel-thickness-fluctuation scattering on mobility characteristics in ETB InGaAs-OI MOSFETs.