Single-Photon Emission in Telecommunication Band from an InAs Quantum Dot in a Pillar Structure

摘要

We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an as-etched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.