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机译:带有分子束外延的InP上生长的InAs量子点在电信带中的单光子发射
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0021, Japan;
机译:带有分子束外延的InP上生长的InAs量子点在电信带中的单光子发射
机译:低密度种子量子点上成核的单个InAs量子点的电信波带单光子发射
机译:迁移增强分子束外延和常规分子束外延生长的InAs量子点的结构和光学性质的比较
机译:柱结构中InAs量子点在电信频段中发出的单光子发射
机译:静水压力对分子束外延生长的铟镓磷化物合金和砷化镓/磷化铟镓量子阱结构的影响。
机译:低密度种子量子点上成核的单个InAs量子点的电信波带单光子发射
机译:带有分子束外延的InP上生长的InAs量子点在电信带中的单光子发射