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Geometric effect on InAs/GaAs quantum dot lasers analyzed with the aid of EDX mapping

机译：借助EDX映射分析INAS / GAAS量子点激光器的几何效果

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The light-output-current characteristics and temperature stability of quantum dot (QD) lasers with different ridge heights were analyzed with the aid of energy dispersive X-ray (EDX) elementary mapping. The results show that the performance of QD laser with shallow ridge decays due to the lateral carrier spreading.

机译：借助于能量分散X射线（EDX）基本映射，分析了用不同脊高度的量子点（QD）激光的光输出电流特性和温度稳定性。结果表明，由于横向载体扩散，QD激光与浅脊衰减的性能。

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《IEEE International Symposium on the Physical Failure Analysis of Integrated Circuits 》|2013年||共4页
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Wang Rui; Yee Kian Seng; Phua Reese;
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中图分类半导体集成电路（固体电路） ;
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专利

1. InAs/GaAs self-assembled quantum-dot lasers grown by metalorganic chemical vapor deposition—Effects of postgrowth annealing on stacked InAs quantum dots [J] . Jun Tatebayashi, Yasuhiko Arakawa, Nobuaki Hatori, Applied Physics Letters . 2004 ,第6期

机译：金属有机化学气相沉积法生长的InAs / GaAs自组装量子点激光器-生长后退火对堆叠的InAs量子点的影响
2. Geometrical Effects on Characteristic Temperature and Modal Gain of InAs/GaAs Quantum-Dot Lasers [J] . Rui Wang, Soon Fatt Yoon, Han Xue Zhao, Photonics Technology Letters, IEEE . 2011 ,第13期

机译：几何形状对InAs / GaAs量子点激光器特征温度和模态增益的影响
3. Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots [J] . Moiseev E. I., Maximov M. V., Kryzhanovskaya N. V., Semiconductors . 2020 ,第2期

机译：基于IngaAsn量子阱和InaAs量子点的注射微磁盘激光器的比较分析
4. Geometric effect on InAs/GaAs quantum dot lasers analyzed with the aid of EDX mapping [C] . Wang Rui, Yee Kian Seng, Phua Reese 2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits . 2013

机译：EDX映射分析对InAs / GaAs量子点激光器的几何效应
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

机译：在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
7. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除InAs / GaAs量子点中的双峰大小以制备1.3μm量子点激光器

Geometric effect on InAs/GaAs quantum dot lasers analyzed with the aid of EDX mapping

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