Electrical Parameters and Current Conduction Mechanism in Cr/Au/n-InP Schottky Structure at Different Annealing Temperatures

摘要

Cr/Au/n-InP Schottky structures are fabricated and their electrical characteristics are investigated at different annealing temperatures. As-deposited Cr/Au/n-InP Schottky diode exhibits a barrier height of 0.51 eV (I-V) and 0.64 eV (C-V), which increases to 0.63 eV (I-V) and 0.75 eV (C-V) after annealing at 100 °C. A maximum barrier height of 0.71 eV (I-V) and 0.81 eV (C-V) is achieved for the Cr/Au Schottky contacts after annealing at 200 °C. Further, it is observed that the Schottky barrier height slightly decreases upon annealing at temperature of 300 °C and the obtained values are 0.58 eV (I-V), 0.69 eV (C-V). The reverse-bias leakage current mechanism of Cr/Au/n-InP Schottky barrier diode is investigated. Investigations reveal that the Schottky emission is the dominant mechanism and the Poole-Frenkel emission occurs only in the high voltage region.