On the examination of temperature-dependent possible current-conduction mechanisms of Au/(nanocarbon- PVP)/n-Si Schottky barrier diodes in wide range of voltage

摘要

Au/(nanocarbon-PVP)/n-Si SDs were fabricated and their current-conduction mechanisms (CCMs) have been examined in elaborative by utilizing current-voltage (Ⅰ-Ⅴ) characteristics in a temperature range of 60-340 K at (± 3 V) ranges. The values of ideality factor (n) and zero-bias barrier height (Φ_(b0)) determined from the linear-part of semi-logarithmic forward bias Ⅰ_F-Ⅴ_F properties based on Thermionic-Emission (TE) theory revealed that decrease in Φ_(b0) and increase in n with decreasing temperature. Additionally, Richardson constant (A*) value was very found close to its theoretical value. The values of Φ_(b0) and nchanged from 0.173 eV to 0.837 eV and 16.60 to 2.85 with increasing temperature from 60 to 340 K. The Φ_(b0) relationship with temperature is disagreement with the negative temperature coefficient of the bandgap of Si for the ideal diode. The calculated higher value of n at low temperatures was attributed to the inhomogeneities of BH rather than the interlayer, surface-states (N_(ss)), and image-force lowering. With lowing temperatures, CCMs may be governed by tunneling over the lower barriers, via N_(ss) and generation recombination (GR), as well as TE and hence a complete description of CCM and understanding of the formation BH, remain a compelling problem.N_(ss)-(E_c-E_(ss)) profile was also obtained from Ⅰ_F-Ⅴ_F data for each temperature.